DS Breakdown Voltage-Min 25V
Pulsed Drain Current-Max (IDM) 304A
Drain Current-Max (Abs) (ID) 22.4A
Continuous Drain Current (ID) 94A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 25V
Gate Charge (Qg) (Max) @ Vgs 18.9nC @ 10V
Current - Continuous Drain (Id) @ 25°C 22.4A Ta 94A Tc
Input Capacitance (Ciss) (Max) @ Vds 1205pF @ 12V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Rds On (Max) @ Id, Vgs 3.3m Ω @ 30A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.66W Ta 46.3W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ