STP6NM60N
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 600V 4.6A 3-Pin(3+Tab) TO-220 Tube
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Buying Options
Total Price: USD $5.68
Unit Price: USD $5.681
≥1 USD $5.681
≥10 USD $4.66165
≥100 USD $4.51535
≥500 USD $4.37
≥1000 USD $4.22465
Inventory: 1197
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 65 mJ
Drain to Source Breakdown Voltage 600V
Gate to Source Voltage (Vgs) 25V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 4.6A
Turn-Off Delay Time 40 ns
Fall Time (Typ) 9 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 8ns
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4.6A Tc
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 920m Ω @ 2.3A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 45W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 45W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STP6N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Resistance 920mOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series MDmesh? II
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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