IRF8721GPBF
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 14A 8-SOIC
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Technical Details
Compliance
RoHS Status RoHS Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Width 3.9878mm
Length 4.9784mm
Height 1.4986mm
Technical
Nominal Vgs 2.35 V
Rds On Max 8.5 mΩ
Drain to Source Resistance 12.5mOhm
Input Capacitance 1.04nF
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 14A
Turn-Off Delay Time 8.1 ns
Fall Time (Typ) 7 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Rise Time 11ns
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 14A Ta
Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 15V
Vgs(th) (Max) @ Id 2.35V @ 25μA
Rds On (Max) @ Id, Vgs 8.5mOhm @ 14A, 10V
FET Type N-Channel
Turn On Delay Time 8.2 ns
Power Dissipation 2.5W
Power Dissipation-Max 2.5W Ta
Technology MOSFET (Metal Oxide)
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series HEXFET?
Published 2009
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Supplier Device Package 8-SO
Number of Pins 8
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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