STP45NE06
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 45A TO-220
PDF
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Buying Options
Total Price: USD $1.4
Unit Price: USD $1.39745
≥1 USD $1.39745
≥10 USD $1.14665
≥100 USD $1.11055
≥500 USD $1.07445
≥1000 USD $1.0393
Inventory: 1116
Minimum: 1
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Technical Details
Compliance
Lead Free Contains Lead
RoHS Status Non-RoHS Compliant
Radiation Hardening No
Technical
Avalanche Energy Rating (Eas) 150 mJ
Pulsed Drain Current-Max (IDM) 180A
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.028Ohm
Gate to Source Voltage (Vgs) 20V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 45A
Fall Time (Typ) 45 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 100ns
Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
Current - Continuous Drain (Id) @ 25°C 45A Tc
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 28m Ω @ 22.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 100W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 100W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number STP45N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin/Lead (Sn/Pb)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e0
Series STripFET?
Packaging Tube
Operating Temperature 175°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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