SI2347DS-T1-GE3
RoHS 
RoHS compliant
RoHS compliantPackage TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
P-Channel 30 V 42 mOhm 22 nC Surface Mount Power Mosfet - SOT-23-3
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Buying Options
Total Price: USD $0.36
Unit Price: USD $0.3608
≥1 USD $0.3608
≥10 USD $0.2552
≥100 USD $0.128832
≥500 USD $0.114206
≥1000 USD $0.08888
Inventory: 202179
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No
Dimensions
Height 1.12mm
Technical
Max Junction Temperature (Tj) 150°C
Drain to Source Breakdown Voltage -30V
Drain-source On Resistance-Max 0.042Ohm
Drain Current-Max (Abs) (ID) 5A
Gate to Source Voltage (Vgs) 20V
Threshold Voltage -2.5V
Continuous Drain Current (ID) 5A
Turn-Off Delay Time 19 ns
Fall Time (Typ) 9 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Rise Time 6ns
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Tc
Input Capacitance (Ciss) (Max) @ Vds 705pF @ 15V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 42m Ω @ 3.8A, 10V
Transistor Application SWITCHING
FET Type P-Channel
Power Dissipation 1.7W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 1.7W Tc
Number of Channels 1
Number of Elements 1
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series TrenchFET?
Published 2013
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin
Supply Chain
Factory Lead Time 14 Weeks
Alternative Model
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