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STP18N55M5

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 550V 13A TO220AB
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Buying Options
Total Price: USD $2.43
Unit Price: USD $2.4288
≥1 USD $2.4288
≥10 USD $1.922448
≥100 USD $1.6478
≥500 USD $1.464742
≥1000 USD $1.254185
≥3000 USD $1.180951
Inventory: 992
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Radiation Hardening No

Dimensions

Width 4.6mm
Length 10.4mm
Height 15.75mm

Technical

Avalanche Energy Rating (Eas) 200 mJ
Pulsed Drain Current-Max (IDM) 52A
Drain to Source Breakdown Voltage 550V
Gate to Source Voltage (Vgs) 25V
JEDEC-95 Code TO-220AB
Threshold Voltage 4V
Continuous Drain Current (ID) 13A
Turn-Off Delay Time 29 ns
Fall Time (Typ) 13 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 9.5ns
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Input Capacitance (Ciss) (Max) @ Vds 1260pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 192m Ω @ 8A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 90W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 110W Tc
Number of Elements 1
Pin Count 3
Base Part Number STP18N
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature ULTRA-LOW RESISTANCE
Terminal Finish Matte Tin (Sn)
Resistance 240MOhm
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series MDmesh? V
Packaging Tube
Operating Temperature 150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Factory Lead Time 17 Weeks

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