DS Breakdown Voltage-Min 30V
Drain-source On Resistance-Max 0.004Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 16A
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Current - Continuous Drain (Id) @ 25°C 16A Ta
Input Capacitance (Ciss) (Max) @ Vds 5700pF @ 15V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 4m Ω @ 20A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.56W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ