STP180NS04ZC
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 33V 120A TO-220
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Buying Options
Total Price: USD $0.81
Unit Price: USD $0.8056
≥1 USD $0.8056
≥10 USD $0.6612
≥100 USD $0.6403
≥500 USD $0.62035
≥1000 USD $0.59945
Inventory: 184
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status NRND (Last Updated: 8 months ago)
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series SAFeFET?
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number STP180
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 330W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.2m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4560pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 250ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 115 ns
Continuous Drain Current (ID) 120A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0042Ohm
Drain to Source Breakdown Voltage 33V
Pulsed Drain Current-Max (IDM) 480A
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
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