RQA0002DNSTB-E
RoHS
/
Package 3-DFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH HWSON2
PDF
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Buying Options
Total Price: USD $3.48
Unit Price: USD $3.4848
≥1 USD $3.4848
Inventory: 1285
Minimum: 1
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Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
DS Breakdown Voltage-Min 16V
Drain Current-Max (Abs) (ID) 3.8A
Vgs (Max) ±5V
Drain to Source Voltage (Vdss) 16V
Current - Continuous Drain (Id) @ 25°C 3.8A Ta
Vgs(th) (Max) @ Id 750mV @ 1mA
Transistor Application SWITCHING
FET Type N-Channel
Case Connection SOURCE
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 15W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-N3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) 20
Peak Reflow Temperature (Cel) 260
Terminal Form NO LEAD
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Packaging Tape & Reel (TR)
Operating Temperature 150°C
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 3-DFN Exposed Pad
Mounting Type Surface Mount
Alternative Model
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