Drain to Source Breakdown Voltage 550V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 14A
Turn-Off Delay Time 71 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 500V
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.8A Ta 14A Tc
Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 210m Ω @ 7A, 10V
Turn On Delay Time 6.6 ns
Element Configuration Single
Power Dissipation-Max 3W Ta 125W Tc
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ