STL20N6F7
RoHS
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Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 60V 100A
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Buying Options
Total Price: USD $1.05
Unit Price: USD $1.0472
≥1 USD $1.0472
≥10 USD $0.858
≥100 USD $0.667304
≥500 USD $0.565594
≥1000 USD $0.460733
Inventory: 9049
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series STripFET? F7
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STL20
JESD-30 Code S-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta 78W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.4m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 100A
Drain-source On Resistance-Max 0.0054Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 60V
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