STL19N65M5
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 12.5A POWERFLAT
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Buying Options
Total Price: USD $2.18
Unit Price: USD $2.1824
≥1 USD $2.1824
≥10 USD $1.81632
≥100 USD $1.445488
≥500 USD $1.223077
≥1000 USD $1.037766
Inventory: 1096
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Pulsed Drain Current-Max (IDM) 50A
Drain to Source Breakdown Voltage 710V
Drain Current-Max (Abs) (ID) 2.3A
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 12.5A
Turn-Off Delay Time 11 ns
Fall Time (Typ) 9 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Rise Time 7 ns
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Current - Continuous Drain (Id) @ 25°C 2.3A Ta 12.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 240m Ω @ 7.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 36 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2.8W Ta 90W Tc
Number of Channels 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code S-PSSO-N4
Base Part Number STL19
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form NO LEAD
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Resistance 215mOhm
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Active
Series MDmesh? V
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 12 Weeks
Alternative Model
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