Operating Temperature -55°C~175°C TJ
Moisture Sensitivity Level (MSL) Not Applicable
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 25W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Avalanche Energy Rating (Eas) 60 mJ
Drain to Source Breakdown Voltage 120V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 8.5A
Turn-Off Delay Time 32 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8.5A Tc
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 180m Ω @ 7A, 10V
Transistor Application SWITCHING