STL18N55M5
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 550V 2.4A POWERFLAT
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Buying Options
Total Price: USD $4.88
Unit Price: USD $4.8752
≥1 USD $4.8752
≥10 USD $4.09376
≥100 USD $3.311704
≥500 USD $2.943706
Inventory: 895
Minimum: 1
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Technical Details
Technical
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Base Part Number STL18
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta 90W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1352pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2.4A Ta 13A Tc
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Rise Time 9.5 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 550V
Pulsed Drain Current-Max (IDM) 9.6A
Avalanche Energy Rating (Eas) 200 mJ
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Resistance 270MOhm
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series MDmesh? V
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Physical
Transistor Element Material SILICON
Number of Pins 4
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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