STI26NM60N
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 20A I2PAK
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Buying Options
Total Price: USD $4.22
Unit Price: USD $4.2152
≥1 USD $4.2152
≥10 USD $3.337312
≥100 USD $2.860528
≥500 USD $2.542672
Inventory: 980
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Dimensions
Width 4.6mm
Length 10.4mm
Height 10.75mm
Technical
Avalanche Energy Rating (Eas) 610 mJ
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 80A
Drain-source On Resistance-Max 0.165Ohm
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 20A
Turn-Off Delay Time 85 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 165m Ω @ 10A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 13 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 140W Tc
Number of Elements 1
Pin Count 3
Base Part Number STI26N
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series MDmesh? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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