Avalanche Energy Rating (Eas) 1.61 mJ
DS Breakdown Voltage-Min 250V
Pulsed Drain Current-Max (IDM) 16A
Drain Current-Max (Abs) (ID) 4A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 250V
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 1mA
Rds On (Max) @ Id, Vgs 1.3 Ω @ 2A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 29W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ