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RD3U040CNTL1

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description NCH 250V 4A POWER MOSFET
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Buying Options
Total Price: USD $1.21
Unit Price: USD $1.2144
≥1 USD $1.2144
≥10 USD $0.99088
≥100 USD $0.77088
≥500 USD $0.6534
≥1000 USD $0.532259
Inventory: 751
Minimum: 1
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

Avalanche Energy Rating (Eas) 1.61 mJ
DS Breakdown Voltage-Min 250V
Pulsed Drain Current-Max (IDM) 16A
Drain Current-Max (Abs) (ID) 4A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 250V
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4A Tc
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Vgs(th) (Max) @ Id 5.5V @ 1mA
Rds On (Max) @ Id, Vgs 1.3 Ω @ 2A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 29W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSSO-G2
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount

Supply Chain

Factory Lead Time 16 Weeks

Alternative Model

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