Drain to Source Breakdown Voltage 620V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 8.4A
Turn-Off Delay Time 41 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8.4A Tc
Input Capacitance (Ciss) (Max) @ Vds 1250pF @ 50V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Rds On (Max) @ Id, Vgs 750m Ω @ 4A, 10V
Turn On Delay Time 14.5 ns
Element Configuration Single
Power Dissipation-Max 30W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ