Pulsed Drain Current-Max (IDM) 200A
Drain to Source Breakdown Voltage 80V
Drain-source On Resistance-Max 0.00765Ohm
Drain Current-Max (Abs) (ID) 60A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 13A
Turn-Off Delay Time 27 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Current - Continuous Drain (Id) @ 25°C 13A Ta 60A Tc
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 7.65m Ω @ 13A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 2.5W Ta 104W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ