Avalanche Energy Rating (Eas) 65 mJ
Pulsed Drain Current-Max (IDM) 18.4A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.92Ohm
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 4.6A
Turn-Off Delay Time 40 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4.6A Tc
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 920m Ω @ 2.3A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 20W Tc
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ