IXTU02N50D
RoHS 
RoHS compliant
RoHS compliantPackage TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 0.2A TO-251
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Buying Options
Total Price: USD $1.18
Unit Price: USD $1.1792
≥1 USD $1.1792
≥10 USD $0.948138
≥100 USD $0.78012
≥500 USD $0.704334
Inventory: 463
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 24 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1.1W Ta 25W Tc
Element Configuration Single
Power Dissipation 1.1W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30 Ω @ 50mA, 0V
Vgs(th) (Max) @ Id 5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Tc
Rise Time 4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.2A
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 0.8A
FET Feature Depletion Mode
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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