Pulsed Drain Current-Max (IDM) 48A
Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 12A
Turn-Off Delay Time 55 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 455m Ω @ 5.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 25W Tc
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ