STP23NM60N
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 19A TO-220
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Buying Options
Total Price: USD $2.72
Unit Price: USD $2.7208
≥1 USD $2.7208
≥10 USD $2.2325
≥100 USD $2.1622
≥500 USD $2.09285
≥1000 USD $2.0235
Inventory: 1278
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 700 mJ
Pulsed Drain Current-Max (IDM) 76A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.18Ohm
Drain Current-Max (Abs) (ID) 19A
Gate to Source Voltage (Vgs) 25V
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 9.5A
Turn-Off Delay Time 90 ns
Fall Time (Typ) 36 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 15ns
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Current - Continuous Drain (Id) @ 25°C 19A Tc
Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 180m Ω @ 9.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Power Dissipation 35W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 150W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number STP23N
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series MDmesh? II
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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