Technology MOSFET (Metal Oxide)
Power Dissipation-Max 60W Tc
Element Configuration Single
Rds On (Max) @ Id, Vgs 10.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1434pF @ 25V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~175°C TJ