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Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
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Technical Details

Compliance

RoHS Status RoHS Compliant

Technical

VCEsat-Max 0.5 V
Collector-Emitter Voltage-Max 20V
DC Current Gain-Min (hFE) 85
Collector Current-Max (IC) 1A
Power Dissipation-Max (Abs) 2W
Transition Frequency 65MHz
Polarity/Channel Type PNP
Transistor Application AMPLIFIER
Case Connection COLLECTOR
Configuration SINGLE
Number of Elements 1
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G4
Time@Peak Reflow Temperature-Max (s) 10
Reach Compliance Code compliant
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position DUAL
Subcategory Other Transistors
HTS Code 8541.29.00.75
Terminal Finish MATTE TIN (315)
ECCN Code EAR99
Moisture Sensitivity Level (MSL) 1
Pbfree Code icon-pbfree yes
JESD-609 Code e3

Physical

Transistor Element Material SILICON
Number of Terminals 4
Surface Mount YES

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