Drain to Source Breakdown Voltage 55V
Drain-source On Resistance-Max 0.008Ohm
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 80A
Turn-Off Delay Time 135 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 136nC @ 5V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Input Capacitance (Ciss) (Max) @ Vds 4850pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 6.5m Ω @ 40A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 300W Tc
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ