STB5NK52ZD-1
RoHS 
RoHS compliant
RoHS compliantPackage TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 520V 4.4A I2PAK
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Buying Options
Total Price: USD $1.34
Unit Price: USD $1.34235
≥1 USD $1.34235
≥10 USD $1.102
≥100 USD $1.0678
≥500 USD $1.03265
≥1000 USD $0.99845
Inventory: 4002
Minimum: 1
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Technical Details
Technical
Number of Terminations 3
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STB5N
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 70W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 70W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series SuperMESH?
Packaging Tube
Operating Temperature -55°C~150°C TJ
Avalanche Energy Rating (Eas) 170 mJ
Pulsed Drain Current-Max (IDM) 17.6A
Drain to Source Breakdown Voltage 520V
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 4.4A
Turn-Off Delay Time 23.1 ns
Fall Time (Typ) 15 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 13.6ns
Gate Charge (Qg) (Max) @ Vgs 16.9nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4.4A Tc
Input Capacitance (Ciss) (Max) @ Vds 529pF @ 25V
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Mounting Type Through Hole
Mount Through Hole
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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