IXFR24N50
RoHS 
RoHS compliant
RoHS compliantPackage ISOPLUS247?
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 500V 24A 3-Pin(3+Tab) ISOPLUS247
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Pulsed Drain Current-Max (IDM) 96A
Drain to Source Breakdown Voltage 500V
Drain Current-Max (Abs) (ID) 22A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 24A
Turn-Off Delay Time 65 ns
Fall Time (Typ) 30 ns
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 33ns
Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 25V
Vgs(th) (Max) @ Id 4V @ 4mA
Rds On (Max) @ Id, Vgs 230m Ω @ 12A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Power Dissipation 250W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 250W Tc
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Additional Feature AVALANCHE RATED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series HiPerFET?
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case ISOPLUS247?
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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