Avalanche Energy Rating (Eas) 550 mJ
DS Breakdown Voltage-Min 300V
Pulsed Drain Current-Max (IDM) 212A
Drain-source On Resistance-Max 0.04Ohm
Continuous Drain Current (ID) 53A
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 300V
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Current - Continuous Drain (Id) @ 25°C 53A Tc
Input Capacitance (Ciss) (Max) @ Vds 4240pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 40m Ω @ 26.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 250W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series Automotive, AEC-Q101, MDmesh? V
Operating Temperature 150°C TJ