STB33N65M2
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V 24A D2PAK
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Buying Options
Total Price: USD $3.6
Unit Price: USD $3.5992
≥1 USD $3.5992
≥10 USD $3.02544
≥100 USD $2.44728
≥500 USD $2.17536
Inventory: 342
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Series MDmesh? M2
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Base Part Number STB33N
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 190W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 13.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 140m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1790pF @ 100V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 41.5nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Turn-Off Delay Time 72.5 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.14Ohm
Pulsed Drain Current-Max (IDM) 96A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 780 mJ
Dimensions
Height 4.6mm
Length 10.4mm
Width 9.35mm
Compliance
RoHS Status ROHS3 Compliant
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