RMW280N03TB
RoHS 
RoHS compliant
RoHS compliantPackage 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 28A 8PSOP
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Buying Options
Total Price: USD $8.3
Unit Price: USD $8.3011
≥1 USD $8.3011
≥10 USD $6.8115
≥100 USD $6.5987
≥500 USD $6.3859
≥1000 USD $6.1731
Inventory: 1274
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Turn On Delay Time 24 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8m Ω @ 28A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3130pF @ 15V
Current - Continuous Drain (Id) @ 25°C 28A Ta
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Rise Time 81ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 94 ns
Continuous Drain Current (ID) 28A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 112A
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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