STB230NH03L
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R
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Buying Options
Total Price: USD $29.04
Unit Price: USD $29.0377
≥1 USD $29.0377
≥10 USD $23.826
≥100 USD $23.0812
≥500 USD $22.3364
≥1000 USD $21.59255
Inventory: 1184
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series STripFET?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STB230N
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 10V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Rise Time 322ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 102 ns
Turn-Off Delay Time 123 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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