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STB15N65M5

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 11A D2PAK
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Buying Options
Total Price: USD $0.53
Unit Price: USD $0.532
≥1 USD $0.532
≥10 USD $0.437
≥100 USD $0.42275
≥500 USD $0.40945
≥1000 USD $0.39615
Inventory: 23351
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

Dimensions

Width 9.35mm
Length 10.4mm
Height 4.6mm

Technical

Pulsed Drain Current-Max (IDM) 44A
Drain to Source Breakdown Voltage 650V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 11A
Turn-Off Delay Time 30 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Input Capacitance (Ciss) (Max) @ Vds 810pF @ 100V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 340m Ω @ 5.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 30 ns
Case Connection DRAIN
Power Dissipation 85W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 85W Tc
Number of Elements 1
JESD-30 Code R-PSSO-G2
Base Part Number STB15N
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Terminal Form GULL WING
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Resistance 340MOhm
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e3
Series MDmesh? V
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 17 Weeks

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