Avalanche Energy Rating (Eas) 200 mJ
DS Breakdown Voltage-Min 600V
Pulsed Drain Current-Max (IDM) 44A
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 11A
Turn-Off Delay Time 30 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 50V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 360m Ω @ 5.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 90W Tc
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 245
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ