STB12NM50ND
RoHS 
RoHS compliant
RoHS compliantPackage TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 11A D2PAK
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Buying Options
Total Price: USD $3.32
Unit Price: USD $3.31835
≥1 USD $3.31835
≥10 USD $2.7227
≥100 USD $2.63815
≥500 USD $2.55265
≥1000 USD $2.46715
Inventory: 1759
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
Pulsed Drain Current-Max (IDM) 44A
Drain to Source Breakdown Voltage 500V
Gate to Source Voltage (Vgs) 25V
Continuous Drain Current (ID) 11A
Turn-Off Delay Time 40 ns
Fall Time (Typ) 17 ns
Vgs (Max) ±25V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 15ns
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Current - Continuous Drain (Id) @ 25°C 11A Tc
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 50V
Vgs(th) (Max) @ Id 5V @ 250μA
Rds On (Max) @ Id, Vgs 380m Ω @ 5.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Turn On Delay Time 12 ns
Case Connection DRAIN
Power Dissipation 100W
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 100W Tc
Configuration SINGLE
Number of Elements 1
JESD-30 Code R-PSSO-G2
Pin Count 4
Base Part Number STB12N
Peak Reflow Temperature (Cel) 245
Terminal Form GULL WING
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn) - annealed
Resistance 290mOhm
ECCN Code EAR99
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series FDmesh? II
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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