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IXFB70N60Q2

IXYS
RoHS
RoHS RoHS compliant
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 70A PLUS264
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Buying Options
Total Price: USD $85.36
Unit Price: USD $85.3632
≥1 USD $85.3632
≥10 USD $82.60915
≥100 USD $79.8551
≥500 USD $71.59485
Inventory: 1154
Minimum: 1
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Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 264
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series HiPerFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 890W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 890W
Case Connection DRAIN
Turn On Delay Time 26 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 88m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 5.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 265nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.088Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 280A
Avalanche Energy Rating (Eas) 5 mJ

Dimensions

Height 26.59mm
Length 20.29mm
Width 5.31mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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