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STB12NM50FDT4

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-Ch 500 Volt 12 Amp
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Series FDmesh?
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Reach Compliance Code not_compliant
Current Rating 12A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STB12N
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 160W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 160W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 400m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.4Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 48A
Avalanche Energy Rating (Eas) 400 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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