R6046FNZC8
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 46A TO-3PF
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 142 mJ
Pulsed Drain Current-Max (IDM) 115A
Drain to Source Breakdown Voltage 600V
Drain-source On Resistance-Max 0.093Ohm
Gate to Source Voltage (Vgs) 30V
Continuous Drain Current (ID) 46A
Turn-Off Delay Time 230 ns
Fall Time (Typ) 80 ns
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Rise Time 150ns
Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
Current - Continuous Drain (Id) @ 25°C 46A Ta
Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 93m Ω @ 23A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Power Dissipation 120W
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 120W Tc
Number of Elements 1
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Technology MOSFET (Metal Oxide)
Capacitance -3pF
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Published 2011
Packaging Tube
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-3P-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 10 Weeks
Alternative Model
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