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RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 400V 10A TO-220
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Buying Options
Total Price: USD $0.26
Unit Price: USD $0.264848
≥1 USD $0.264848
≥10 USD $0.207407
≥100 USD $0.185143
≥500 USD $0.157384
≥1000 USD $0.277328
≥1000 USD $0.268171
Inventory: 1850
Minimum: 1
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON

Technical

Operating Temperature -65°C~150°C TJ
Packaging Tube
Series PowerMESH? II
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH VOLTAGE, FAST SWITCHING
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 400V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 10A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IRF7
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Voltage 400V
Power Dissipation-Max 125W Tc
Element Configuration Single
Current 105A
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 550m Ω @ 5.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Rise Time 10 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 10A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.55Ohm
Drain to Source Breakdown Voltage 400V
Avalanche Energy Rating (Eas) 520 mJ
Feedback Cap-Max (Crss) 120 pF
Turn Off Time-Max (toff) 196 ns
Turn On Time-Max (ton) 79 ns

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

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