Avalanche Energy Rating (Eas) 549 mJ
Pulsed Drain Current-Max (IDM) 900A
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.0024Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 143A
Turn-Off Delay Time 27 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Gate Charge (Qg) (Max) @ Vgs 45.2nC @ 10V
Current - Continuous Drain (Id) @ 25°C 31.4A Ta 143A Tc
Input Capacitance (Ciss) (Max) @ Vds 3071pF @ 15V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Rds On (Max) @ Id, Vgs 2.1m Ω @ 30A, 10V
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 3.71W Ta 77W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Reach Compliance Code not_compliant
Technology MOSFET (Metal Oxide)
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ