ZDS020N60TB
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 8SOIC
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Buying Options
Total Price: USD $2.12
Unit Price: USD $2.1242
≥1 USD $2.1242
≥10 USD $1.7423
≥100 USD $1.68815
≥500 USD $1.634
≥1000 USD $1.5789
Inventory: 1151
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2W Tc
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 10V
Current - Continuous Drain (Id) @ 25°C 630mA Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 65 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 630mA
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.63A
Drain-source On Resistance-Max 5Ohm
Pulsed Drain Current-Max (IDM) 2.5A
DS Breakdown Voltage-Min 600V
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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