SCT3060ARC14
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-4
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
650V NCH SIC TRENCH MOSFET IN 4P
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Buying Options
Total Price: USD $20.54
Unit Price: USD $20.5392
≥1 USD $20.5392
≥10 USD $17.02947
≥100 USD $15.96511
≥500 USD $13.623518
Inventory: 358
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
DS Breakdown Voltage-Min 650V
Pulsed Drain Current-Max (IDM) 97A
Drain-source On Resistance-Max 0.078Ohm
Drain Current-Max (Abs) (ID) 39A
Vgs (Max) +22V, -4V
Drive Voltage (Max Rds On,Min Rds On) 18V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 58nC @ 18V
Current - Continuous Drain (Id) @ 25°C 39A Tc
Input Capacitance (Ciss) (Max) @ Vds 852pF @ 500V
Vgs(th) (Max) @ Id 5.6V @ 6.67mA
Rds On (Max) @ Id, Vgs 78m Ω @ 13A, 18V
Transistor Application SWITCHING
FET Type N-Channel
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 165W
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSFM-T4
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Packaging Tube
Operating Temperature 175°C TJ
Physical
Transistor Element Material SILICON CARBIDE
Surface Mount NO
Package / Case TO-247-4
Mounting Type Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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