SI8809EDB-T2-E1
RoHS 
RoHS compliant
RoHS compliantPackage 4-XFBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET 20V 2.6A 0.9W 90mOhms @ 4.5V
PDF
/
Buying Options
Total Price: USD $0.4
Unit Price: USD $0.4028
≥1 USD $0.4028
≥10 USD $0.3306
≥100 USD $0.32015
≥500 USD $0.31065
≥1000 USD $0.3002
Inventory: 1198
Minimum: 1
-
+
Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
DS Breakdown Voltage-Min 20V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) -2.6A
Vgs (Max) ±8V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 8V
Vgs(th) (Max) @ Id 900mV @ 250μA
Rds On (Max) @ Id, Vgs 90m Ω @ 1.5A, 4.5V
Transistor Application SWITCHING
FET Type P-Channel
Power Dissipation 500mW
Operating Mode ENHANCEMENT MODE
Element Configuration Single
Power Dissipation-Max 500mW Ta
Number of Channels 1
Number of Elements 1
Pin Count 4
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form BALL
Terminal Position BOTTOM
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish Pure Matte Tin (Sn)
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Series TrenchFET?
Published 2017
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 4
Package / Case 4-XFBGA
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Factory Lead Time 15 Weeks
Alternative Model
Recommended For You
SI8809EDB-T2-E1+price,SI8809EDB-T2-E1+datasheet,SI8809EDB-T2-E1+in stock,buy+SI8809EDB-T2-E1,finder+SI8809EDB-T2-E1,SI8809EDB-T2-E1+tutorials,SI8809EDB-T2-E1+download