Pulsed Drain Current-Max (IDM) 20A
Drain to Source Breakdown Voltage -12V
Drain Current-Max (Abs) (ID) 5A
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 5A
Turn-Off Delay Time 410 ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Drain to Source Voltage (Vdss) 12V
Gate Charge (Qg) (Max) @ Vgs 34nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 6V
Vgs(th) (Max) @ Id 1V @ 1mA
Rds On (Max) @ Id, Vgs 26m Ω @ 5A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 600mW Ta
Configuration SINGLE WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Technology MOSFET (Metal Oxide)
Subcategory Other Transistors
Terminal Finish TIN COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ