RF4E100AJTCR
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerUDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 30V 10A HUML2020L8
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Buying Options
Total Price: USD $0.52
Unit Price: USD $0.5192
≥1 USD $0.5192
≥10 USD $0.42328
≥100 USD $0.329296
≥500 USD $0.279154
≥1000 USD $0.2761
Inventory: 1210
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 6.7 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 36A
Drain-source On Resistance-Max 0.0124Ohm
Drain Current-Max (Abs) (ID) 10A
Vgs (Max) ±12V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 10A Ta
Input Capacitance (Ciss) (Max) @ Vds 1460pF @ 15V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Rds On (Max) @ Id, Vgs 12.4m Ω @ 10A, 4.5V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 2W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code S-PDSO-N6
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form NO LEAD
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
ECCN Code EAR99
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2015
Packaging Cut Tape (CT)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-PowerUDFN
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 20 Weeks
Alternative Model
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