FET Feature Schottky Diode (Body)
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Current - Continuous Drain (Id) @ 25°C 20A Ta 40A Tc
Input Capacitance (Ciss) (Max) @ Vds 4100pF @ 15V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 4.5m Ω @ 20A, 10V
Power Dissipation-Max 3.1W Ta 36W Tc
Technology MOSFET (Metal Oxide)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ