R8010ANX
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 10A TO220
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Buying Options
Total Price: USD $1.34
Unit Price: USD $1.34235
≥1 USD $1.34235
≥10 USD $1.102
≥100 USD $1.0678
≥500 USD $1.03265
≥1000 USD $0.99845
Inventory: 1128
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 6.63 mJ
DS Breakdown Voltage-Min 800V
Pulsed Drain Current-Max (IDM) 40A
Drain-source On Resistance-Max 0.56Ohm
JEDEC-95 Code TO-220AB
Continuous Drain Current (ID) 10A
Vgs (Max) ±30V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 800V
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 25V
Vgs(th) (Max) @ Id 5V @ 1mA
Rds On (Max) @ Id, Vgs 560m Ω @ 5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 40W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Published 2013
Packaging Bulk
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 10 Weeks
Alternative Model
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