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Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - RF
Description RF MOSFET LDMOS 28V H-37265-2
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Technical Details

Physical

Surface Mount YES
Transistor Element Material SILICON

Technical

Published 2009
Number of Terminations 2
ECCN Code EAR99
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-CDFP-F2
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
DS Breakdown Voltage-Min 65V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY B

Compliance

RoHS Status RoHS Compliant

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