R8008ANX
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 8A TO-220FM
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Buying Options
Total Price: USD $1.34
Unit Price: USD $1.34235
≥1 USD $1.34235
≥10 USD $1.102
≥100 USD $1.0678
≥500 USD $1.03265
≥1000 USD $0.99845
Inventory: 1305
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Bulk
Published 2011
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 50W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 50W
Case Connection ISOLATED
Turn On Delay Time 32 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.03 Ω @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Ta
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 85 ns
Continuous Drain Current (ID) 8A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 32A
Avalanche Energy Rating (Eas) 4.2 mJ
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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