BSP299 E6327
RoHS
/
Package TO-261-4, TO-261AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 500V 400MA SOT-223
PDF
/
Inventory: 8973
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Compliance
RoHS Status Non-RoHS Compliant
Technical
Avalanche Energy Rating (Eas) 130 mJ
DS Breakdown Voltage-Min 500V
Pulsed Drain Current-Max (IDM) 1.6A
Drain-source On Resistance-Max 4Ohm
Drain Current-Max (Abs) (ID) 0.4A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 400mA Ta
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
Vgs(th) (Max) @ Id 4V @ 1mA
Rds On (Max) @ Id, Vgs 4 Ω @ 400mA, 10V
FET Type N-Channel
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 1.8W Ta
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G4
Pin Count 4
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 255
Terminal Form GULL WING
Terminal Position DUAL
Technology MOSFET (Metal Oxide)
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
ECCN Code EAR99
Number of Terminations 4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Discontinued
Series SIPMOS?
Published 2007
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case TO-261-4, TO-261AA
Mounting Type Surface Mount
Alternative Model
Recommended For You
BSP299 E6327+price,BSP299 E6327+datasheet,BSP299 E6327+in stock,buy+BSP299 E6327,finder+BSP299 E6327,BSP299 E6327+tutorials,BSP299 E6327+download