R6530ENZC8
RoHS 
RoHS compliant
RoHS compliantPackage TO-3P-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V TO PKG
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Avalanche Energy Rating (Eas) 730 mJ
DS Breakdown Voltage-Min 650V
Pulsed Drain Current-Max (IDM) 90A
Drain-source On Resistance-Max 0.14Ohm
Drain Current-Max (Abs) (ID) 30A
Vgs (Max) ±20V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain to Source Voltage (Vdss) 650V
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Input Capacitance (Ciss) (Max) @ Vds 2.1nF @ 25V
Vgs(th) (Max) @ Id 4V @ 960μA
Rds On (Max) @ Id, Vgs 140m Ω @ 14.5A, 10V
Transistor Application SWITCHING
FET Type N-Channel
Case Connection ISOLATED
Operating Mode ENHANCEMENT MODE
Power Dissipation-Max 86W Tc
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
JESD-30 Code R-PSFM-T3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Technology MOSFET (Metal Oxide)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Last Time Buy
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-3P-3 Full Pack
Mounting Type Through Hole
Alternative Model
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